IXBT20N360HV IGBT Transistor

The IXBT20N360HV is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXBT20N360HV transistor as follows.

IXBT20N360HV Transistor Specification

Transistor Code		IXBT20N360HV
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO268HV
Collector Power Dissipation (Maximum)	Pc	430W
Collector-Emitter Voltage (Maximum)	VCE	3600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	3.4V
Collector Current (Maximum)	IC	70A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		110
Rise Time		14

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