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IXBT20N360HV IGBT Transistor

The IXBT20N360HV is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXBT20N360HV transistor as follows.

Circuit diagram symbol of the IXBT20N360HV transistor

IXBT20N360HV Transistor Specification

Transistor Code IXBT20N360HV
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO268HV
Collector Power Dissipation (Maximum) Pc 430W
Collector-Emitter Voltage (Maximum) VCE 3600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 3.4V
Collector Current (Maximum) IC 70A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 110
Rise Time 14

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