IXBR42N170 IGBT Transistor

The IXBR42N170 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXBR42N170 transistor as follows.

IXBR42N170 Transistor Specification

Transistor Code		IXBR42N170
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		ISOPLUS247
Collector-Emitter Voltage (Maximum)	VCE	1700V
Collector-Emitter Saturation Voltage	VCE(on)	2.9V
Collector Current (Maximum)	IC	57A
Rise Time		740

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