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IXBN75N170 IGBT Transistor

The IXBN75N170 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXBN75N170 transistor as follows.

Circuit diagram symbol of the IXBN75N170 transistor

IXBN75N170 Transistor Specification

Transistor Code IXBN75N170
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package SOT227B
Collector-Emitter Voltage (Maximum) VCE 1700V
Collector-Emitter Saturation Voltage VCE(on) 3.1V
Collector Current (Maximum) IC 145A
Rise Time 440

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