IXBN42N170A IGBT Transistor

The IXBN42N170A is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXBN42N170A transistor as follows.

IXBN42N170A Transistor Specification

Transistor Code		IXBN42N170A
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SOT227B
Collector-Emitter Voltage (Maximum)	VCE	1700V
Collector-Emitter Saturation Voltage	VCE(on)	6V
Collector Current (Maximum)	IC	42A
Rise Time		50

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