IXBL60N360 IGBT Transistor

The IXBL60N360 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXBL60N360 transistor as follows.

IXBL60N360 Transistor Specification

Transistor Code		IXBL60N360
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		I5PAK
Collector Power Dissipation (Maximum)	Pc	417W
Collector-Emitter Voltage (Maximum)	VCE	3600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	3.4V
Collector Current (Maximum)	IC	92A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		367
Rise Time		300

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