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IXBK75N170 IGBT Transistor

The IXBK75N170 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXBK75N170 transistor as follows.

Circuit diagram symbol of the IXBK75N170 transistor

IXBK75N170 Transistor Specification

Transistor Code IXBK75N170
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO264
Collector-Emitter Voltage (Maximum) VCE 1700V
Collector-Emitter Saturation Voltage VCE(on) 3.1V
Collector Current (Maximum) IC 200A

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