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IXBK64N250 IGBT Transistor

The IXBK64N250 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXBK64N250 transistor as follows.

Circuit diagram symbol of the IXBK64N250 transistor

IXBK64N250 Transistor Specification

Transistor Code IXBK64N250
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO264
Collector-Emitter Voltage (Maximum) VCE 2500V
Collector-Emitter Saturation Voltage VCE(on) 3V
Collector Current (Maximum) IC 156A
Rise Time 170

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