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IXBK55N300 IGBT Transistor

The IXBK55N300 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXBK55N300 transistor as follows.

Circuit diagram symbol of the IXBK55N300 transistor

IXBK55N300 Transistor Specification

Transistor Code IXBK55N300
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO264
Collector-Emitter Voltage (Maximum) VCE 3000V
Collector-Emitter Saturation Voltage VCE(on) 3.2V
Collector Current (Maximum) IC 130A
Rise Time 268

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