IXBJ40N160 IGBT Transistor

The IXBJ40N160 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXBJ40N160 transistor as follows.

IXBJ40N160 Transistor Specification

Transistor Code		IXBJ40N160
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO268
Collector Power Dissipation (Maximum)	Pc	350W
Collector-Emitter Voltage (Maximum)	VCE	1600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	6.2V
Collector Current (Maximum)	IC	33A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		220
Rise Time		60

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