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IXBH40N140 IGBT Transistor

The IXBH40N140 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXBH40N140 transistor as follows.

Circuit diagram symbol of the IXBH40N140 transistor

IXBH40N140 Transistor Specification

Transistor Code IXBH40N140
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247AD
Collector Power Dissipation (Maximum) Pc 350W
Collector-Emitter Voltage (Maximum) VCE 1400V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 6.2V
Collector Current (Maximum) IC 33A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 220
Rise Time 60

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