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IXBH20N160 IGBT Transistor

The IXBH20N160 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXBH20N160 transistor as follows.

Circuit diagram symbol of the IXBH20N160 transistor

IXBH20N160 Transistor Specification

Transistor Code IXBH20N160
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247AD
Collector Power Dissipation (Maximum) Pc 200W
Collector-Emitter Voltage (Maximum) VCE 1600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 4.7V
Collector Current (Maximum) IC 20A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 140
Rise Time 60

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