IXBH10N300 IGBT Transistor

The IXBH10N300 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXBH10N300 transistor as follows.

IXBH10N300 Transistor Specification

Transistor Code		IXBH10N300
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	180W
Collector-Emitter Voltage (Maximum)	VCE	3000V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	3.2V
Collector Current (Maximum)	IC	30A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		40
Rise Time		385

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