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IXBH10N300 IGBT Transistor

The IXBH10N300 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXBH10N300 transistor as follows.

Circuit diagram symbol of the IXBH10N300 transistor

IXBH10N300 Transistor Specification

Transistor Code IXBH10N300
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 180W
Collector-Emitter Voltage (Maximum) VCE 3000V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 3.2V
Collector Current (Maximum) IC 30A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 40
Rise Time 385

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