IXBF9N160G IGBT Transistor

The IXBF9N160G is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXBF9N160G transistor as follows.

IXBF9N160G Transistor Specification

Transistor Code		IXBF9N160G
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		ISOPLUS_I4-PAC(3-LEA
Collector-Emitter Voltage (Maximum)	VCE	1600V
Collector-Emitter Saturation Voltage	VCE(on)	4.9V
Collector Current (Maximum)	IC	7A
Rise Time		70

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