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IXBF55N300 IGBT Transistor

The IXBF55N300 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXBF55N300 transistor as follows.

Circuit diagram symbol of the IXBF55N300 transistor

IXBF55N300 Transistor Specification

Transistor Code IXBF55N300
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package ISOPLUS_I4-PAK
Collector-Emitter Voltage (Maximum) VCE 3000V
Collector-Emitter Saturation Voltage VCE(on) 3.2V
Collector Current (Maximum) IC 73A
Rise Time 268

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