IXBF50N360 IGBT Transistor

The IXBF50N360 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXBF50N360 transistor as follows.

IXBF50N360 Transistor Specification

Transistor Code		IXBF50N360
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		I4PAK
Collector Power Dissipation (Maximum)	Pc	290W
Collector-Emitter Voltage (Maximum)	VCE	3600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.9V
Collector Current (Maximum)	IC	70A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		195
Rise Time		420

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