IXBF10N300C IGBT Transistor

The IXBF10N300C is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXBF10N300C transistor as follows.

IXBF10N300C Transistor Specification

Transistor Code		IXBF10N300C
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		I4PAK
Collector Power Dissipation (Maximum)	Pc	240W
Collector-Emitter Voltage (Maximum)	VCE	3000V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	6V
Collector Current (Maximum)	IC	29A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		204
Rise Time		10

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