IXBA12N300HV IGBT Transistor

The IXBA12N300HV is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXBA12N300HV transistor as follows.

IXBA12N300HV Transistor Specification

Transistor Code		IXBA12N300HV
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO263AB
Collector Power Dissipation (Maximum)	Pc	160W
Collector-Emitter Voltage (Maximum)	VCE	3000V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	3.2V
Collector Current (Maximum)	IC	30A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		56
Rise Time		140

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