IXA70R1200NA IGBT Transistor

The IXA70R1200NA is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXA70R1200NA transistor as follows.

IXA70R1200NA Transistor Specification

Transistor Code		IXA70R1200NA
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		APPLICATIONS
Collector Power Dissipation (Maximum)	Pc	350W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.8V
Collector Current (Maximum)	IC	100A
Operating Junction Temperature (Maximum)		125 oC
Rise Time		40

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