IXA60IF1200NA IGBT Transistor

The IXA60IF1200NA is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXA60IF1200NA transistor as follows.

IXA60IF1200NA Transistor Specification

Transistor Code		IXA60IF1200NA
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		APPLICATION
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector-Emitter Saturation Voltage	VCE(on)	1.8V
Collector Current (Maximum)	IC	88A
Rise Time		100

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