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IXA55I1200HJ IGBT Transistor

The IXA55I1200HJ is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXA55I1200HJ transistor as follows.

Circuit diagram symbol of the IXA55I1200HJ transistor

IXA55I1200HJ Transistor Specification

Transistor Code IXA55I1200HJ
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package ISOPLUS247
Collector-Emitter Voltage (Maximum) VCE 1200V
Collector-Emitter Saturation Voltage VCE(on) 1.8V
Collector Current (Maximum) IC 84A
Rise Time 100

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