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IXA4I1200UC IGBT Transistor

The IXA4I1200UC is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXA4I1200UC transistor as follows.

Circuit diagram symbol of the IXA4I1200UC transistor

IXA4I1200UC Transistor Specification

Transistor Code IXA4I1200UC
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package X4TAUF BACKSIDE
Collector Power Dissipation (Maximum) Pc 45W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.8V
Collector Current (Maximum) IC 9A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 40

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