IXA33IF1200HB IGBT Transistor

The IXA33IF1200HB is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXA33IF1200HB transistor as follows.

IXA33IF1200HB Transistor Specification

Transistor Code		IXA33IF1200HB
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		COLLECTOR 2(C) (G) 1
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector-Emitter Saturation Voltage	VCE(on)	1.8V
Collector Current (Maximum)	IC	58A
Rise Time		100

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