IXA30RG1200DHGLB IGBT Transistor

The IXA30RG1200DHGLB is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXA30RG1200DHGLB transistor as follows.

IXA30RG1200DHGLB Transistor Specification

Transistor Code		IXA30RG1200DHGLB
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		APPLICATION
Collector Power Dissipation (Maximum)	Pc	147W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.8V
Collector Current (Maximum)	IC	43A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		40

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