IXA220I650NA IGBT Transistor

The IXA220I650NA is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXA220I650NA transistor as follows.

IXA220I650NA Transistor Specification

Transistor Code		IXA220I650NA
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		APPLICATIONS
Collector Power Dissipation (Maximum)	Pc	625W
Collector-Emitter Voltage (Maximum)	VCE	650V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.8V
Collector Current (Maximum)	IC	255A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		50

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