ISL9V3040S3 IGBT Transistor

The ISL9V3040S3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the ISL9V3040S3 transistor as follows.

ISL9V3040S3 Transistor Specification

Transistor Code		ISL9V3040S3
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO262AA
Collector Power Dissipation (Maximum)	Pc	150W
Collector-Emitter Voltage (Maximum)	VCE	400V
Gate-Emitter Voltage (Maximum)	VGE	12V
Collector-Emitter Saturation Voltage	VCE(on)	2.2V
Collector Current (Maximum)	IC	21A
Operating Junction Temperature (Maximum)		175 oC

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