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ISL9V3040P3 IGBT Transistor

The ISL9V3040P3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the ISL9V3040P3 transistor as follows.

Circuit diagram symbol of the ISL9V3040P3 transistor

ISL9V3040P3 Transistor Specification

Transistor Code ISL9V3040P3
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO220
Collector Power Dissipation (Maximum) Pc 150W
Collector-Emitter Voltage (Maximum) VCE 400V
Gate-Emitter Voltage (Maximum) VGE 12V
Collector-Emitter Saturation Voltage VCE(on) 2.2V
Collector Current (Maximum) IC 21A
Operating Junction Temperature (Maximum) 175 oC

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