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ISL9V3040D3S IGBT Transistor

The ISL9V3040D3S is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the ISL9V3040D3S transistor as follows.

Circuit diagram symbol of the ISL9V3040D3S transistor

ISL9V3040D3S Transistor Specification

Transistor Code ISL9V3040D3S
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO252AA
Collector Power Dissipation (Maximum) Pc 150W
Collector-Emitter Voltage (Maximum) VCE 430V
Gate-Emitter Voltage (Maximum) VGE 10V
Collector-Emitter Saturation Voltage VCE(on) 2.2V
Collector Current (Maximum) IC 21A
Operating Junction Temperature (Maximum) 175 oC

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