ISL9V3040D3S IGBT Transistor

The ISL9V3040D3S is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the ISL9V3040D3S transistor as follows.

ISL9V3040D3S Transistor Specification

Transistor Code		ISL9V3040D3S
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO252AA
Collector Power Dissipation (Maximum)	Pc	150W
Collector-Emitter Voltage (Maximum)	VCE	430V
Gate-Emitter Voltage (Maximum)	VGE	10V
Collector-Emitter Saturation Voltage	VCE(on)	2.2V
Collector Current (Maximum)	IC	21A
Operating Junction Temperature (Maximum)		175 oC

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