IRGSL8B60K IGBT Transistor

The IRGSL8B60K is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRGSL8B60K transistor as follows.

IRGSL8B60K Transistor Specification

Transistor Code		IRGSL8B60K
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO262
Collector Power Dissipation (Maximum)	Pc	167W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.8V
Collector Current (Maximum)	IC	28A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		38
Rise Time		22

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