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IRGSL8B60K IGBT Transistor

The IRGSL8B60K is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRGSL8B60K transistor as follows.

Circuit diagram symbol of the IRGSL8B60K transistor

IRGSL8B60K Transistor Specification

Transistor Code IRGSL8B60K
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO262
Collector Power Dissipation (Maximum) Pc 167W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.8V
Collector Current (Maximum) IC 28A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 38
Rise Time 22

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