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IRGSL6B60KD IGBT Transistor

The IRGSL6B60KD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRGSL6B60KD transistor as follows.

Circuit diagram symbol of the IRGSL6B60KD transistor

IRGSL6B60KD Transistor Specification

Transistor Code IRGSL6B60KD
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO262
Collector Power Dissipation (Maximum) Pc 90W
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 2.00V
Collector Current (Maximum) IC 13A

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