IRGSL30B60K IGBT Transistor

The IRGSL30B60K is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRGSL30B60K transistor as follows.

IRGSL30B60K Transistor Specification

Transistor Code		IRGSL30B60K
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO262
Collector Power Dissipation (Maximum)	Pc	370W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2.35V
Collector Current (Maximum)	IC	78A

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