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IRGS6B60K IGBT Transistor

The IRGS6B60K is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRGS6B60K transistor as follows.

Circuit diagram symbol of the IRGS6B60K transistor

IRGS6B60K Transistor Specification

Transistor Code IRGS6B60K
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package D2PAK
Collector Power Dissipation (Maximum) Pc 90W
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 1.80V
Collector Current (Maximum) IC 13A

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