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IRGS4B60KD1 IGBT Transistor

The IRGS4B60KD1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRGS4B60KD1 transistor as follows.

Circuit diagram symbol of the IRGS4B60KD1 transistor

IRGS4B60KD1 Transistor Specification

Transistor Code IRGS4B60KD1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package D2PAK
Collector Power Dissipation (Maximum) Pc 63W
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 2.50V
Collector Current (Maximum) IC 12A

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