IRGS4B60KD1 IGBT Transistor

The IRGS4B60KD1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRGS4B60KD1 transistor as follows.

IRGS4B60KD1 Transistor Specification

Transistor Code		IRGS4B60KD1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		D2PAK
Collector Power Dissipation (Maximum)	Pc	63W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2.50V
Collector Current (Maximum)	IC	12A

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