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IRGS4B60K IGBT Transistor

The IRGS4B60K is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRGS4B60K transistor as follows.

Circuit diagram symbol of the IRGS4B60K transistor

IRGS4B60K Transistor Specification

Transistor Code IRGS4B60K
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package D2PAK
Collector Power Dissipation (Maximum) Pc 63W
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 2.5V
Collector Current (Maximum) IC 12A

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