IRGS4715D IGBT Transistor

The IRGS4715D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRGS4715D transistor as follows.

IRGS4715D Transistor Specification

Transistor Code		IRGS4715D
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO263
Collector Power Dissipation (Maximum)	Pc	100W
Collector-Emitter Voltage (Maximum)	VCE	650V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	1.7V
Collector Current (Maximum)	IC	21A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		50
Rise Time		20

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