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IRGS4064D IGBT Transistor

The IRGS4064D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRGS4064D transistor as follows.

Circuit diagram symbol of the IRGS4064D transistor

IRGS4064D Transistor Specification

Transistor Code IRGS4064D
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO263
Collector Power Dissipation (Maximum) Pc 101W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.6V
Collector Current (Maximum) IC 20A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 49
Rise Time 15

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