IRGPS66160D IGBT Transistor

The IRGPS66160D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRGPS66160D transistor as follows.

IRGPS66160D Transistor Specification

Transistor Code		IRGPS66160D
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO274AA
Collector Power Dissipation (Maximum)	Pc	750W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.65V
Collector Current (Maximum)	IC	240A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		470
Rise Time		75

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