IRGP6690D IGBT Transistor

The IRGP6690D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRGP6690D transistor as follows.

IRGP6690D Transistor Specification

Transistor Code		IRGP6690D
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	483W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.65V
Collector Current (Maximum)	IC	140A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		270
Rise Time		86

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