IRGP6660D IGBT Transistor

The IRGP6660D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRGP6660D transistor as follows.

IRGP6660D Transistor Specification

Transistor Code		IRGP6660D
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	330W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.65V
Collector Current (Maximum)	IC	95A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		175
Rise Time		50

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