IRGP6650D IGBT Transistor

The IRGP6650D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRGP6650D transistor as follows.

IRGP6650D Transistor Specification

Transistor Code		IRGP6650D
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	306W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.65V
Collector Current (Maximum)	IC	80A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		130
Rise Time		30

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