IRGP6630D IGBT Transistor

The IRGP6630D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRGP6630D transistor as follows.

IRGP6630D Transistor Specification

Transistor Code		IRGP6630D
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	192W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.65V
Collector Current (Maximum)	IC	47A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		70
Rise Time		25

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