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IRGP6630D IGBT Transistor

The IRGP6630D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRGP6630D transistor as follows.

Circuit diagram symbol of the IRGP6630D transistor

IRGP6630D Transistor Specification

Transistor Code IRGP6630D
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 192W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.65V
Collector Current (Maximum) IC 47A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 70
Rise Time 25

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