IRGP50B60PD1-E IGBT Transistor

The IRGP50B60PD1-E is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRGP50B60PD1-E transistor as follows.

IRGP50B60PD1-E Transistor Specification

Transistor Code		IRGP50B60PD1-E
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247AD
Collector Power Dissipation (Maximum)	Pc	390W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2.00V
Collector Current (Maximum)	IC	75A

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