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IRGP50B60PD IGBT Transistor

The IRGP50B60PD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRGP50B60PD transistor as follows.

Circuit diagram symbol of the IRGP50B60PD transistor

IRGP50B60PD Transistor Specification

Transistor Code IRGP50B60PD
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 370W
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 2.20V
Collector Current (Maximum) IC 75A

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