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IRGP4790D IGBT Transistor

The IRGP4790D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRGP4790D transistor as follows.

Circuit diagram symbol of the IRGP4790D transistor

IRGP4790D Transistor Specification

Transistor Code IRGP4790D
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 455W
Collector-Emitter Voltage (Maximum) VCE 650V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.7V
Collector Current (Maximum) IC 140A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 310
Rise Time 70

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