IRGP4790 IGBT Transistor

The IRGP4790 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRGP4790 transistor as follows.

IRGP4790 Transistor Specification

Transistor Code		IRGP4790
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	455W
Collector-Emitter Voltage (Maximum)	VCE	650V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.7V
Collector Current (Maximum)	IC	140A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		230
Rise Time		70

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