IRGP4760D IGBT Transistor

The IRGP4760D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRGP4760D transistor as follows.

IRGP4760D Transistor Specification

Transistor Code		IRGP4760D
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	325W
Collector-Emitter Voltage (Maximum)	VCE	650V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.7V
Collector Current (Maximum)	IC	90A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		235
Rise Time		60

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