IRGP4069D-E IGBT Transistor

The IRGP4069D-E is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRGP4069D-E transistor as follows.

IRGP4069D-E Transistor Specification

Transistor Code		IRGP4069D-E
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247AD
Collector Power Dissipation (Maximum)	Pc	268W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.6V
Collector Current (Maximum)	IC	76A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		197
Rise Time		33

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