IRGP4063D1 IGBT Transistor

The IRGP4063D1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRGP4063D1 transistor as follows.

IRGP4063D1 Transistor Specification

Transistor Code		IRGP4063D1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	330W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.65V
Collector Current (Maximum)	IC	100A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		200
Rise Time		50

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