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IRGP35B60PD-E IGBT Transistor

The IRGP35B60PD-E is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRGP35B60PD-E transistor as follows.

Circuit diagram symbol of the IRGP35B60PD-E transistor

IRGP35B60PD-E Transistor Specification

Transistor Code IRGP35B60PD-E
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247AD
Collector Power Dissipation (Maximum) Pc 308W
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 1.85V
Collector Current (Maximum) IC 60A

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