IRGP30B60KD-E IGBT Transistor

The IRGP30B60KD-E is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRGP30B60KD-E transistor as follows.

IRGP30B60KD-E Transistor Specification

Transistor Code		IRGP30B60KD-E
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	304W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2.35V
Collector Current (Maximum)	IC	60A

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