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IRGIB6B60KD IGBT Transistor

The IRGIB6B60KD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRGIB6B60KD transistor as follows.

Circuit diagram symbol of the IRGIB6B60KD transistor

IRGIB6B60KD Transistor Specification

Transistor Code IRGIB6B60KD
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO220_FULLPAK
Collector Power Dissipation (Maximum) Pc 32W
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 2.20V
Collector Current (Maximum) IC 9.0A

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